this is going to make little to no sense to anyone not in the same very specific segment of the industry as us but
it is very frustrating that forming a gate oxide on silicon carbide selectively worsens the carrier mobility of the semiconductor in exactly the places where having good mobility is most critical to operation
there are probably ways to form the oxide that do not have this side effect but they require equipment we don't have access to and are still being researched anyway
-F
@Felthry that sounds very frustrating, yeah...
- 🎒💧
@Felthry Ahahah, yeah, I sure hate it when... the oxide... does the bad mobility... thing...